IBC solar cell based on ultrathin black silicon wafer achieves 16.4% efficiency
- Admin
- Apr 26, 2024
- 1 min read
An international research team developed ultra-thin substrates using black silicon technology for interdigitated back-contact solar cells. They used deep reactive ion etching at cryogenic temperatures to achieve ultrathin and flexible wafers. The cells included vanadium oxide and laser processed phosphorus-doped silicon carbide stacks as transport layers. The surface passivation layer consisted of aluminum oxide and silicon carbide. The new technology showed improved power conversion efficiency and optical properties.
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