Longi, ANU develop gettering-based process to improve n-type wafer quality
- Admin
- Sep 22, 2024
- 1 min read
Researchers from Australian National University and Chinese PV module manufacturer Longi investigated the wafer quality of n-type industrial ingots made via the Recharged Czochralski (RCz) process, applying two defect mitigation strategies – Tabula Rasa (TR) and phosphorus diffusion gettering (PDG) – to further improve the bulk lifetimes. They found that the impurities are initially released into a solid solution and then undergo diffusion through the silicon.
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