Epitaxially grown p-type wafers with TOPCon rear emitter solar cells

Fraunhofer Institute for Solar Energy Systems (ISE) in Germany has proposed the use of epitaxially grown p-type silicon wafers in TOPCon rear emitter (TOPCore) solar cells, achieving efficiencies exceeding 25%. They utilized a chemical vapor deposition (CVD) batch reactor and plasma-assisted atomic layer deposition (ALD) for wafer processing. The research focuses on improving cell performance and material quality of solar cells.

Source:

https://www.pv-magazine.com/2023/05/09/epitaxially-grown-p-type-wafers-with-topcon-rear-emitter-solar-cells/

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